BYG24G-E3/TR3(2008) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
BYG24G-E3/TR3 Datasheet PDF : 4 Pages
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BYG24D thru BYG24J
Vishay General Semiconductor
100
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0
0.5
1.0
1.5
2.0
2.5
3.0
Forward Voltage (V)
Figure 3. Forward Current vs. Forward Voltage
30
f = 1 MHz
25
20
15
10
5
0
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Diode Capacitance vs. Reverse Voltage
1.8
1.6
1.4
RθJA = 25 K/W
1.2
VR = VRRM
Half Sine-Wave
1.0
RθJA = 125 K/W
0.8
0.6
0.4
RθJA = 150 K/W
0.2
0.0
0
20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Figure 4. Average Forward Current vs. Ambient Temperature
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.090 (2.29)
0.078 (1.98)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208
(5.28) REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 88960 For technical questions within your region, please contact one of the following:
Revision: 11-Apr-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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