BYG24JHM3_A/H View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
BYG24JHM3_A/H Datasheet PDF : 4 Pages
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www.vishay.com
BYG24D, BYG24G, BYG24J
Vishay General Semiconductor
100
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0
0.5
1.0
1.5
2.0
2.5
3.0
Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
1.8
1.6
VR = VRRM
Half Sine-Wave
1.4
RθJA = 25 K/W
1.2
1.0
RθJA = 125 K/W
0.8
0.6
0.4
RθJA = 150 K/W
0.2
0.0
0
20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Fig. 4 - Average Forward Current vs. Ambient Temperature
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
30
f = 1 MHz
25
20
15
10
5
0
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.090 (2.29)
0.078 (1.98)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 09-Aug-2018
3
Document Number: 88960
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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