Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifiers
Product specification
BYV36 series
SYMBOL
PARAMETER
CONDITIONS
trr
reverse recovery time
BYV36A to C
BYV36D and E
BYV36F and G
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A;
see Fig. 26
Cd
diode capacitance
BYV36A to C
f = 1 MHz; VR = 0 V;
see Figs 23 and 24
BYV36D and E
BYV36F and G
-d-d--I--tR--
maximum slope of reverse recovery when switched from
current
IF = 1 A to VR ≥ 30 V and
BYV36A to C
dIF/dt = −1 A/µs;
see Fig.27
BYV36D and E
BYV36F and G
MIN.
−
−
−
−
−
−
−
−
−
TYP. MAX. UNIT
−
100 ns
−
150 ns
−
250 ns
45
− pF
40
− pF
35
− pF
−
7 A/µs
−
6 A/µs
−
5 A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
46
K/W
100
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.25.
For more information please refer to the “General Part of associated Handbook”.
1996 Jul 01
4