BYV42F-150 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BYV42F-150 Datasheet PDF : 7 Pages
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Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV42F, BYV42EX series
ESD LIMITING VALUE
SYMBOL PARAMETER
VC
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MIN.
-
MAX.
8
UNIT
kV
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all SOT186A package; f = 50-60 Hz;
three terminals to external
sinusoidal waveform; R.H. ≤ 65%;
heatsink
clean and dustfree
Visol
Repetitive peak voltage from all SOT186 package; R.H. ≤ 65%;
three terminals to external
clean and dustfree
heatsink
Cisol
Capacitance from pin 2 to
f = 1 MHz
external heatsink
MIN.
-
-
-
TYP.
10
MAX. UNIT
2500 V
1500 V
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Thermal resistance junction to
heatsink
Rth j-a
Thermal resistance junction to
ambient
CONDITIONS
both diodes conducting
with heatsink compound
without heatsink compound
per diode
with heatsink compound
without heatsink compound
in free air
MIN. TYP. MAX. UNIT
-
-
4.0 K/W
-
-
8.0 K/W
-
-
5.0 K/W
-
-
9.0 K/W
-
55
- K/W
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
VF
Forward voltage
IF = 15 A; Tj = 150˚C
IF = 15 A
IF = 30 A
IR
Reverse current
VR = VRWM; Tj = 100 ˚C
VR = VRWM
Qs
Reverse recovery charge
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
trr1
Reverse recovery time
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
trr2
Reverse recovery time
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
Irrm
Peak reverse recovery current IF = 10 A; VR ≥ 30 V;
-dIF/dt = 50 A/µs; Tj = 100˚C
Vfr
Forward recovery voltage
IF = 1 A; dIF/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
-
-
TYP.
0.83
0.95
1.00
0.5
10
6
20
13
2
1
MAX.
0.90
1.05
1.20
1
100
15
28
UNIT
V
V
V
mA
µA
nC
ns
22 ns
2.4 A
-
V
October 1998
2
Rev 1.300
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