BYV72F-150 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BYV72F-150 Datasheet PDF : 6 Pages
| |||
Philips Semiconductors
Rectifier diodes
ultrafast
Product specification
BYV72F series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree
three terminals to external
heatsink
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
22
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Thermal resistance junction to
heatsink
Rth j-a
Thermal resistance junction to
ambient
CONDITIONS
both diodes conducting
with heatsink compound
without heatsink compound
per diode
with heatsink compound
without heatsink compound
in free air
MIN. TYP. MAX. UNIT
-
-
4.0 K/W
-
-
8.0 K/W
-
-
5.0 K/W
-
-
9.0 K/W
-
35
- K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
VF
Forward voltage (per diode)
IR
Reverse current (per diode)
CONDITIONS
IF = 15 A; Tj = 150˚C
IF = 15 A
IF = 30 A
VR = VRWM; Tj = 100 ˚C
VR = VRWM
MIN.
-
-
-
-
-
TYP.
0.83
0.95
1.00
0.5
10
MAX.
0.90
1.05
1.20
1
100
UNIT
V
V
V
mA
µA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
Qs
Reverse recovery charge (per
diode)
trr
Reverse recovery time (per
diode)
Irrm
Peak reverse recovery current
(per diode)
Vfr
Forward recovery voltage (per
diode)
CONDITIONS
MIN.
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs -
IF = 1 A; VR ≥ 30 V;
-
-dIF/dt = 100 A/µs
IF = 10 A; VR ≥ 30 V;
-
-dIF/dt = 50 A/µs; Tj = 100 ˚C
IF = 1 A; dIF/dt = 10 A/µs
-
TYP.
6
20
2
1
MAX. UNIT
15 nC
28 ns
2.4 A
-
V
October 1994
2
Rev 1.100
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