BYW99W200 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
BYW99W200 Datasheet PDF : 6 Pages
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BYW99P/PI/W
Fig.7 : Average current versus ambient
temperature.
(δ = 0.5) (SOT93, TO247)
I F(a v)( A)
16
15
14
Rt h ( j- a )= R t h( j -c )
13
12
11
10
9
Rth(j-a)=15 o C/W
8
7 =0.5
6
T
5
4
3
2
1 =tp/T
tp
Tamb(o C)
0
0 20 40 60 80 100 120 140 160
Fig.8 : Average current versus ambient
temperature.
(δ = 0.5) (TOP3I)
16 IF(av)(A)
15
14
Rth(j-a)=Rth(j-c)
13
12
11
10
9
Rth(j-a)=15 o C/W
8
7 =0.5
6
T
5
4
3
2
1 =tp/T
tp
Tamb(o C)
0
0 20 40 60 80 100 120 140 160
Fig.9 : Junction capacitance versus reverse Fig.10 : Recovery charges versus dIF/dt.
voltage applied (Typical values).
C(pF)
200
190
180
170
160
150
140
130
120
110
100
1
F=1Mhz Tj=25oC
VR(V)
10
100 200
60 QRR(nC)
55 90%CONFIDENCE
50 IF=IF(av)
45
Tj=100 OC
40
35
30
25
Tj=25 OC
20
15
10
5
dIF/dt(A/us)
0
1
10
100
Fig.11 : Peak reverse current versus dIF/dt.
Fig.12 : Dynamic parameters versus junction
temperature.
IRM(A)
3.0
90%CONFIDENCE
2.5 IF=IF(av)
2.0
Tj=100 OC
1.5
1.0
0.5
0.0
1
20
Tj=25 OC
dIF/dt(A/us)
10
100
Q RR ; IR M[T j] /QRR ; IRM [ Tj=12 5o C]
1.50
1.25
1.00
0.75
0.50
IRM
QRR
0.25
0.00
0
Tj(oC)
25 50 75 100 125 150
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