BYW51-200(2014) View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
BYW51-200 Datasheet PDF : 5 Pages
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BYW51−200
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
TC = 156°C
Per Leg
Total Device
VRRM
VRWM
VR
IF(AV)
200
V
A
8.0
16
Peak Rectified Forward Current (Square Wave, 20 kHz),
TC = 153°C − Per Diode Leg
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFM
IFSM
16
A
100
A
Operating Junction Temperature and Storage Temperature
TJ, Tstg
−65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Conditions
Min. Pad
Min. Pad
Symbol
RqJC
RqJA
Value
3.0
60.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typical Max Unit
Instantaneous Forward Voltage (Note 1)
(iF = 8.0 A, Tj = 100°C)
(iF = 8.0 A, Tj = 25°C)
vF
V
−
0.8
0.89
−
0.89 0.97
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, Tj = 100°C)
(Rated dc Voltage, Tj = 25°C)
iR
mA
−
21
1000
−
3.8
10
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/s)
(IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A)
trr
ns
−
−
35
25
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%
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