BZW50 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
BZW50 Datasheet PDF : 8 Pages
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Characteristics
1
Characteristics
BZW50
Table 1.
Symbol
Absolute maximum ratings (Tamb = 25 °C)
Parameter
PPP
P
IFSM
Tstg
Tj
TL
Peak pulse power dissipation(1)
Tj initial = Tamb
Power dissipation on infinite heatsink
Tamb = 75 °C
Non repetitive surge peak forward current for unidirectional types tp = 10 ms
Tj initial = Tamb
Storage temperature range
Maximum operating junction temperature
Maximum lead temperature for soldering during 10 s at 5 mm from case.
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Value
5000
6.5
500
-65 to + 175
175
260
Unit
W
W
A
°C
°C
°C
Table 2. Thermal resistances
Symbol
Parameter
Rth(j-l)
Rth(j-a)
Junction to leads
Junction to ambient on printed circuit. L lead = 10 mm
Value
15
65
Unit
°C/W
Figure 1. Electrical characteristics - definitions
I
I
Symbol Parameter
VRM Stand-off voltage
Unidirectional IF
IPP
VBR Breakdown voltage
VCL Clamping voltage
IRM
Leakage current @ VRM
VCLVBR VRM
VF
V
VCLVBR VRM
IR
IRM
V
IPP
Peak pulse current
IRM
αT
Voltage temperature coefficient
IR
IRM VRMVBR VCL
IR
VF
Forward voltage drop
RD
Dynamic resistance
IPP
Bidirectional
IPP
Figure 2. Pulse definition for electrical characteristics
Repetitive pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
tr
tp
2/8
Doc ID 2973 Rev 5
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