C30817E View Datasheet(PDF) - PerkinElmer Inc
Part Name
Description
Manufacturer
C30817E Datasheet PDF : 9 Pages
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C30659-900nm Series
Table 1. Electrical Characteristics at TA=22ºC
Test Conditions: Ambient Temperature, Vamp = ±5 Volts, HV = +VR (see Note 1), RL = 50Ω AC Coupled
900nm Silicon APD
Detector Type
C30659-900-R8A
C30659-900-R5B
(Si APD C30817E)
(Si APD C30902E)
Active Diameter
Min
Typ
Max
0.8
Min
Typ
Max
0.5
Active Area
0.5
0.2
Bandwidth Range
50
200
Temperature Coefficient of VR
for constant Gain
VR for specified responsivity
Temperature sensor sensitivity
-
2.2
-
275 Note 1 435
-1.8
-2.1 -2.4
-
0.7
-
180
Note 1 260
-1.8
-2.1
-2.4
Responsivity
At 830nm
At 900nm
RF (Internal Feedback Resistor)
Noise Equivalent Power (NEP) (note 3)
f - 100 kHz, ∆f = 1.0 Hz
At 830nm
At 900nm
Output Spectral Noise Voltage:
(f = 100 kHz - f-3dB)
Output Impedance
System Bandwidth, f-3dB
Rise Time, tr (λ = 830 and 900nm)
10% to 90% points
Fall Time, tf (λ = 830 and 900nm)
90% to 10% points
-
2700
-
-
3000
-
-
82
-
-
14
17
-
12
15
-
35
45
33
40
50
40
50
-
-
7
-
-
7
-
-
460
-
-
400
-
-
12
-
-
35
55
-
40
65
-
15
25
33
40
50
175
200
-
-
2
-
-
2
-
Recovery time after overload (note 4)
-
-
150
-
-
150
Output Voltage Swing (1kΩ load) (note 5)
2
3
-
2
3
-
Output Voltage Swing (50Ω load) (note 5)
0.7
0.9
-
0.7
0.9
-
Output Offset Voltage
-1
0.25
1
-1
0.25
1
Positive Supply Current (V+)
-
20
35
-
20
35
Negative Supply Current (V-)
-
10
20
-
10
20
Notes: 1. A specific value of VR is supplied with each device. The VR value will be within the specified ranges.
2. If = 0.1 mA, 25°C
3. NEPmax is the Maximum Output Spectral Noise Voltage max divided by the typical Responsivity.
4. 0dBm, 250ns pulse.
5. Pulsed operation.
mm
mm2
MHz
V/°C
V
mV/°C
kV/W
kV/W
kΩ
fW/√Hz
fW/√Hz
nV/√Hz
Ω
MHz
ns
ns
ns
V
V
V
mA
mA
w w w. o p t o e l e c t r o n i c s . p e r k i n e l m e r. c o m
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