CJD31C(2002) View Datasheet(PDF) - Central Semiconductor
Part Name
Description
Manufacturer
CJD31C Datasheet PDF : 2 Pages
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CJD31C NPN
CJD32C PNP
CentralTM
Semiconductor Corp.
COMPLEMENTARY SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD31C,
CJD32C types are Complementary Silicon Power
Transistors manufactured by the epitaxial base
process, mounted in a surface mount package
designed for power amplifier and high speed
switching applications.
MARKING CODE: FULL PART NUMBER
DPAK TRANSISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Base Current
IB
Power Dissipation
PD
Power Dissipation (TA=25°C)
PD
Operating and Storage
Junction Temperature
TJ,Tstg
Thermal Resistance
ΘJC
Thermal Resistance
ΘJA
100
100
5.0
3.0
5.0
1.0
15
1.56
-65 to +150
8.33
80.1
UNITS
V
V
V
A
A
A
W
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
SYMBOL
ICEO
ICES
IEBO
BVCEO
VCE(SAT)
VBE(ON)
hFE
hFE
fT
hfe
TEST CONDITIONS
MIN
VCE=60V
VCE=100V
VEB=5.0V
IC=30mA
100
IC=3.0A, IB=375mA
VCE=4.0V, IC=3.0A
VCE=4.0V, IC=1.0A
25
VCE=4.0V, IC=3.0A
10
VCE=10V, IC=500mA, f=1.0MHz
3.0
VCE=10V, IC=500mA, f=1.0kHz
20
MAX
50
20
1.0
1.2
1.8
50
UNITS
µA
µA
mA
V
V
V
MHz
R1 (26-September 2002)
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