BAS11 View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
BAS11 Datasheet PDF : 7 Pages
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Philips Semiconductors
Controlled avalanche rectifiers
Product specification
BAS11; BAS12
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
V(BR)R
IR
trr
Cd
forward voltage
reverse avalanche
breakdown voltage
BAS11
BAS12
reverse current
reverse recovery time
diode capacitance
IF = 300 mA; Tj = Tjmax; see Fig.5
IF = 300 mA; see Fig.5
IR = 0.1 mA
VR = VRRMmax; see Fig.6
VR = VRRMmax; Tj = 125 °C; see Fig.6
when switched from IF = 0.5 A to
IR = 1 A; measured at IR = 0.25 A;
see Fig.9
VR = 0 V; f = 1 MHz; see Fig.7
MIN.
−
−
330
440
−
−
−
−
TYP.
−
−
MAX.
1.0
1.1
UNIT
V
V
−
−V
−
−V
−
250 nA
−
10 µA
−
1 µs
20
− pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
180
K/W
340
K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.8.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 26
3
Not recommended for new designs
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