CM1218-C4 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

CM1218-C4

2/4 and 8-Channel Low Capacitance ESD Protection Array

ON Semiconductor 

CM1218-C4

Specifications

PARAMETER

Storage Temperature Range

Package Power Dissipation

SOT-553

ABSOLUTE MAXIMUM RATINGS

RATING

–65 to +150

0.15

UNITS

°C

W

PARAMETER

Operating Temperature

STANDARD OPERATING CONDITIONS

RATING

–40 to +85

UNITS

°C

ELECTRICAL OPERATING CHARACTERISTICS

SYMBOL PARAMETER

CONDITIONS

CIN Channel Input Capacitance

TA = 25°C, 2.5VDC, 1MHz

∆CIN

VRSO

Differential Channel I/O to GND

Capacitance

Reverse Stand-off Voltage

TA = 25°C, 2.5VDC, 1MHz

IR = 10µA, TA = 25°C

IR = 1mA, TA = 25°C

ILEAK Leakage Current

VIN = 5.0VDC, TA = 25°C

VSIG Small Signal Clamp Voltage

Positive Clamp

Negative Clamp

I = 10mA, TA = 25°C

I = –10mA, TA = 25°C

VESD ESD Withstand Voltage

Contact Discharge per IEC 61000- Notes 2 and 3; TA = 25°C

4-2 standard

Human Body Model, MIL-STD-883, Notes 1 and 3; TA = 25°C

Method 3015

RD Diode Dynamic Resistance

Forward Conduction

Reverse Conduction

TA = 25°C; Note 1

MIN TYP MAX UNITS

7

pF

0.19

pF

5.5

V

6.1

V

1

µA

6.8

V

-0.8

V

+15

kV

+30

kV

0.57

Ω

1.36

Ω

Note 1: Human Body Model per MIL-STD-883, Method 3015, CDischarge = 100pF, RDischarge = 1.5KΩ, VN grounded.

Note 2: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330Ω, VN grounded.

Note 3: These measurements performed with no external capacitor on CHX.

Rev. 2 | Page 3 of 7 | www.onsemi.com

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