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CNY17-1(2001) View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
CNY17-1
(Rev.:2001)
Fairchild
Fairchild Semiconductor Fairchild
CNY17-1 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
PHOTOTRANSISTOR OPTOCOUPLERS
CNY17-1 CNY17-3
CNY17-2 CNY17-4
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters
Test Conditions
Symbol
Device
Min
EMITTER
Input Forward Voltage
Capacitance
IF = 60 mA
IF = 10 mA
VF
VF = 0 V, f = 1.0 MHz
CJ
-M
non -M
non -M
-M
Reverse Leakage Current
DETECTOR
VR = 6 V
IR
All
Breakdown Voltage
Collector to Emitter
IC = 1.0 mA, IF = 0
BVCEO
All
70
Collector to Base
IC = 10 µA, IF = 0
BVCBO
All
70
Emitter to Collector
IE = 100 µA, IF = 0
BVECO
All
7
Leakage Current
Collector to Emitter
VCE = 10 V, IF = 0
ICEO
All
Collector to Base
VCB = 10 V, IF = 0
ICBO
All
Capacitance
Collector to Emitter
VCE = 0, f = 1 MHz
CCE
All
Collector to Base
VCB = 0, f = 1 MHz
CCB
All
Emitter to Base
VEB = 0, f = 1 MHz
CEB
All
ISOLATION CHARACTERISTICS
Characteristic
Test Conditions
Input-Output Isolation Voltage
f = 60 Hz, t = 1 min.
Isolation Resistance
Isolation Capacitance
VI-O = 500 VDC
VI-O = ", f = 1 MHz
Symbol
VISO
RISO
CISO
Device
Black Package
‘-M’ White Package
All
Black Package
‘-M’ White Package
Min
5300
7500
1011
Note
* 5300 Vac(rms) for 1 minute equates to approximately 9000 Vac (pk) for 1 second
** Typical values at TA = 25°C
Typ
1.35
1.15
50
18
0.001
100
120
10
1
8
20
10
Typ**
0.5
0.2
Max
Units
1.65
V
1.50
pF
10
µA
V
V
V
50
nA
20
nA
pF
pF
pF
Max
Units
Vac(rms)*
Vac(pk)
!
pF
www.fairchildsemi.com
2 OF 11
6/06/01 DS300208

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