CUS03(TE85L,Q,M)(2018) View Datasheet(PDF) - Toshiba
Part Name
Description
Manufacturer
CUS03(TE85L,Q,M) Datasheet PDF : 5 Pages
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Marking
Abbreviation Code
3
Part No.
CUS03
Land pattern dimensions for reference only
Unit: mm
2.0
0.5
0.8
1.1
0.8
CUS03
Handling Precaution
1) Schottky barrier diodes have reverse current characteristics compared to other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
2) The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we
recommend for designing a circuit using this device.
VRRM: Use this rating with reference to (1) above. VRRM has a temperature coefficient of 0.1%/°C. Take
this temperature coefficient into account when designing a device at low temperature.
IF (AV): We recommend that the worst-case current be no greater than 80% of the absolute maximum
rating of
IF (AV) and Tj be below 120°C. When using this device, please take the margin into consideration
by using an allowable Ta max-IF (AV) curve.
IFSM: This rating specifies the non-repetitive peak current. This is only applied for an abnormal
operation, which seldom occurs during the lifespan of the device.
Tj: Derate this rating when using a device to ensure high reliability.
We recommend that the device be used at Tj below 120°C.
3) Thermal resistance between junction and ambient fluctuates depending on the device’s mounting condition.
When using a device, design a circuit board and a soldering land size to match the appropriate thermal
resistance value.
4) For other design considerations, see the Toshiba website.
2
2018-07-02
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