CY7C1006B View Datasheet(PDF) - Cypress Semiconductor
Part Name
Description
Manufacturer
CY7C1006B Datasheet PDF : 10 Pages
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CY7C106B
CY7C1006B
Data Retention Characteristics Over the Operating Range
Parameter
VDR
ICCDR
tCDR[4]
tR[4]
Description
VCC for Data Retention
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
Data Retention Waveform
Conditions[10]
VCC = VDR = 2.0V,
CE > VCC – 0.3V,
VIN > VCC – 0.3V or
VIN < 0.3V
Min. Max.
Unit
2.0
V
250
µA
0
ns
200
µs
DATA RETENTION MODE
VCC
4.5V
VDR > 2V
tCDR
CE
Switching Waveforms
Read Cycle No.1[11, 12]
1
tRC
ADDRESS
DATA OUT
tAA
tOHA
PREVIOUS DATA VALID
Read Cycle No. 2 (OE Controlled)[12, 13]
4.5V
tR
DATA VALID
C106B–5
C106B–6
ADDRESS
CE
OE
DATA OUT
VCC
SUPPLY
CURRENT
tRC
tACE
tDOE
tLZOE
HIGH IMPEDANCE
tLZCE
tPU
50%
Notes:
10. No input may exceed VCC +0.5V.
11. Device is continuously selected, OE and CE = VIL.
12. WE is HIGH for read cycle.
13. Address valid prior to or coincident with CE transition LOW.
DATA VALID
tHZOE
tHZCE
HIGH
IMPEDANCE
tPD
50%
ICC
ISB
C106B–7
Document #: 38-05037 Rev. **
Page 6 of 10
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