CY7C1006D View Datasheet(PDF) - Cypress Semiconductor
Part Name
Description
Manufacturer
CY7C1006D Datasheet PDF : 11 Pages
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CY7C106D
CY7C1006D
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VCC Relative to GND [3] ... –0.5V to +6.0V
DC Voltage Applied to Outputs
in High-Z State [3] ...................................–0.5V to VCC + 0.5V
DC Input Voltage [3] ............................... –0.5V to VCC + 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage .......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current .................................................... > 200 mA
Operating Range
Range
Industrial
Ambient
Temperature
–40°C to +85°C
VCC
5V ± 0.5V
Speed
10 ns
Electrical Characteristics (Over the Operating Range)
Parameter
Description
Test Conditions
VOH
Output HIGH Voltage
IOH = –4.0 mA
VOL
Output LOW Voltage
IOL = 8.0 mA
VIH
Input HIGH Voltage
VIL
Input LOW Voltage [3]
IIX
Input Leakage Current
GND < VI < VCC
IOZ
Output Leakage Current
GND < VI < VCC, Output Disabled
ICC
VCC Operating Supply Current VCC = Max,
IOUT = 0 mA,
f = fmax = 1/tRC
100 MHz
83 MHz
66 MHz
40 MHz
ISB1
Automatic CE Power-Down
Max VCC, CE > VIH,
Current—TTL Inputs
VIN > VIH or VIN < VIL, f = fmax
ISB2
Automatic CE Power-Down
Max VCC, CE > VCC – 0.3V,
Current—CMOS Inputs
VIN > VCC – 0.3V or VIN < 0.3V, f=0
7C106D-10
7C1006D-10
Min
Max
2.4
0.4
2.2
–0.5
VCC + 0.5
0.8
–1
+1
–1
+1
80
72
58
37
10
3
Unit
V
V
V
V
µA
µA
mA
mA
mA
mA
mA
mA
Note
3. VIL (min) = –2.0V and VIH(max) = VCC + 1V for pulse durations of less than 5 ns.
Document #: 38-05459 Rev. *E
Page 3 of 11
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