CY7C1006D-10VXI View Datasheet(PDF) - Cypress Semiconductor
Part Name
Description
Manufacturer
CY7C1006D-10VXI Datasheet PDF : 11 Pages
| |||
CY7C106D
CY7C1006D
Data Retention Characteristics (Over the Operating Range)
Parameter
VDR
ICCDR
tCDR [4]
tR [13, 14]
Description
VCC for Data Retention
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
Conditions
VCC = VDR = 2.0V, CE > VCC – 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
Min
Max
Unit
2.0
V
3
mA
0
ns
tRC
ns
Data Retention Waveform
DATA RETENTION MODE
VCC
4.5V
VDR > 2V
4.5V
tCDR
tR
CE
Switching Waveforms
Read Cycle No.1 (Address Transition Controlled) [15, 16]
tRC
ADDRESS
DATA OUT
tAA
tOHA
PREVIOUS DATA VALID
Read Cycle No. 2 (OE Controlled) [16, 17]
DATA VALID
ADDRESS
CE
OE
DATA OUT
VCC
SUPPLY
CURRENT
tRC
tACE
tDOE
tLZOE
HIGH IMPEDANCE
tLZCE
tPU
50%
DATA VALID
tHZOE
tHZCE
HIGH
IMPEDANCE
tPD
ICC
50%
ISB
Notes
13. Full device operation requires linear VCC ramp from VDR to VCC(min) > 50 µs or stable at VCC(min) > 50 µs.
14. tr < 3 ns for all speeds.
15. Device is continuously selected, OE and CE = VIL.
16. WE is HIGH for read cycle.
Document #: 38-05459 Rev. *E
Page 6 of 11
[+] Feedback
Share Link: 