CY7C107-20VC View Datasheet(PDF) - Cypress Semiconductor

Part Name

Description

Manufacturer

CY7C107-20VC

1M x 1 Static RAM

Cypress Semiconductor 

CY7C107

CY7C1007

Electrical Characteristics Over the Operating Range (continued)

Parameter

VOH

VOL

VIH

VIL

IIX

IOZ

IOS

ICC

Description

Output HIGH

Voltage

Output LOW Voltage

Input HIGH Voltage

Input LOW Voltage[1]

Input Load Current

Output Leakage

Current

Output Short

Circuit Current[3]

VCC Operating

Supply Current

ISB1

Automatic CE

Power-Down

Current—TTL Inputs

ISB2

Automatic CE

Power-Down

Current—CMOS Inputs

Test Conditions

VCC = Min., IOH = −4.0 mA

VCC = Min., IOL = 8.0 mA

GND < VI < VCC

GND < VI < VCC,

Output Disabled

VCC = Max., VOUT = GND

VCC = Max.,

IOUT = 0 mA,

f = fMAX = 1/tRC

Max. VCC, CE > VIH,

VIN >VIH or VIN < VIL,

f = f MAX

Max. VCC,

CE > VCC – 0.3V,

VIN > VCC – 0.3V or

VIN < 0.3V, f = 0

7C107-25

7C1007-25

Min.

Max.

2.4

0.4

2.2

VCC + 0.3

−0.3

0.8

−1

+1

−5

+5

−300

120

30

2

Capacitance[4]

Parameter

Description

Test Conditions

CIN: Addresses

CIN: Controls

Input Capacitance

TA = 25°C, f = 1 MHz,

VCC = 5.0V

COUT

Output Capacitance

Note:

4. Tested initially and after any design or process changes that may affect these parameters.

7C107-35

Min.

Max.

Unit

2.4

V

0.4

V

2.2

VCC + 0.3

V

−0.3

0.8

V

−1

+1

µA

−5

+5

µA

−300

mA

110

mA

25

mA

2

mA

Max.

Unit

7

pF

10

pF

10

pF

3

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