CY7C107D(2007) View Datasheet(PDF) - Cypress Semiconductor
Part Name
Description
Manufacturer
CY7C107D Datasheet PDF : 10 Pages
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CY7C107D
CY7C1007D
Data Retention Characteristics (Over the Operating Range)
Parameter
VDR
ICCDR
tCDR [5]
tR [12]
Description
Conditions
VCC for Data Retention
Data Retention Current
VCC = VDR = 2.0V, CE > VCC – 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
Chip Deselect to Data Retention Time
Operation Recovery Time
Data Retention Waveform
DATA RETENTION MODE
VCC
4.5V
VDR > 2V
tCDR
CE
Min
Max
Unit
2.0
V
3
mA
0
ns
tRC
ns
4.5V
tR
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled) [13, 14]
tRC
ADDRESS
DATA OUT
tAA
tOHA
PREVIOUS DATA VALID
Read Cycle No. 2 [14, 15]
DATA VALID
ADDRESS
CE
DATA OUT
VCC
SUPPLY
CURRENT
tRC
tACE
tLZCE
HIGH IMPEDANCE
tPU
50%
DATA VALID
tHZCE
HIGH
IMPEDANCE
tPD
ICC
50%
ISB
Notes
12. Full device operation requires linear VCC ramp from VDR to VCC(min) > 50 µs or stable at VCC(min) > 50 µs.
13. Device is continuously selected, CE = VIL.
14. WE is HIGH for read cycle.
15. Address valid prior to or coincident with CE transition LOW.
Document #: 38-05469 Rev. *E
Page 6 of 10
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