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CY7C1327G(2006) View Datasheet(PDF) - Cypress Semiconductor

Part Name
Description
Manufacturer
CY7C1327G
(Rev.:2006)
Cypress
Cypress Semiconductor Cypress
CY7C1327G Datasheet PDF : 18 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
CY7C1327G
Switching Characteristics Over the Operating Range[14, 15]
Parameter
tPOWER
Clock
tCYC
tCH
tCL
Output Times
tCO
tDOH
tCLZ
tCHZ
tOEV
tOELZ
tOEHZ
Set-up Times
tAS
tADS
tADVS
tWES
tDS
tCES
Hold Times
tAH
tADH
tADVH
tWEH
tDH
tCEH
Description
VDD(Typical) to the First Access[10]
Clock Cycle Time
Clock HIGH
Clock LOW
–250
Min. Max.
1
4.0
1.7
1.7
Data Output Valid After CLK Rise
Data Output Hold After CLK Rise
Clock to Low-Z[11, 12, 13]
Clock to High-Z[11, 12, 13]
OE LOW to Output Valid
OE LOW to Output Low-Z[11, 12, 13]
OE HIGH to Output High-Z[11, 12, 13]
2.6
1.0
0
2.6
2.6
0
2.6
Address Set-up Before CLK Rise
1.2
ADSC, ADSP Set-up Before CLK Rise 1.2
ADV Set-up Before CLK Rise
1.2
GW, BWE, BWX Set-up Before CLK Rise 1.2
Data Input Set-up Before CLK Rise
1.2
Chip Enable Set-Up Before CLK Rise
1.2
Address Hold After CLK Rise
0.3
ADSP, ADSC Hold After CLK Rise
0.3
ADV Hold After CLK Rise
0.3
GW, BWE, BWX Hold After CLK Rise
0.3
Data Input Hold After CLK Rise
0.3
Chip Enable Hold After CLK Rise
0.3
–200
Min. Max.
1
5.0
2.0
2.0
2.8
1.0
0
2.8
2.8
0
2.8
1.2
1.2
1.2
1.2
1.2
1.2
0.5
0.5
0.5
0.5
0.5
0.5
–166
Min. Max.
1
–133
Min. Max. Unit
1
ms
6.0
7.5
ns
2.5
3.0
ns
2.5
3.0
ns
3.5
4.0 ns
1.5
1.5
ns
0
0
ns
3.5
4.0 ns
3.5
4.5 ns
0
0
ns
3.5
4.0 ns
1.5
1.5
ns
1.5
1.5
ns
1.5
1.5
ns
1.5
1.5
ns
1.5
1.5
ns
1.5
1.5
ns
0.5
0.5
ns
0.5
0.5
ns
0.5
0.5
ns
0.5
0.5
ns
0.5
0.5
ns
0.5
0.5
ns
Notes:
10. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a read or write operation
can be initiated.
11. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
12. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.
13. This parameter is sampled and not 100% tested.
14. Timing references level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V on all data sheets.
15. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
Document #: 38-05519 Rev. *F
Page 10 of 18

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