CY7C1350G(2004) View Datasheet(PDF) - Cypress Semiconductor
Part Name
Description
Manufacturer
CY7C1350G Datasheet PDF : 15 Pages
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PRELIMINARY
CY7C1350G
Partial Truth Table for Read/Write[2, 3, 9]
Function
Read
Write − No bytes written
Write Byte A − (DQA and DQPA)
Write Byte B − (DQB and DQPB)
Write Bytes A, B
Write Byte C − (DQC and DQPC)
Write Bytes C,A
Write Bytes C, B
Write Bytes C, B, A
Write Byte D − (DQD and DQPD)
Write Bytes D, A
Write Bytes D, B
Write Bytes D, B, A
Write Bytes D, C
Write Bytes D, C, A
Write Bytes D, C, B
Write All Bytes
WE
BWD
BWC
BWB
BWA
H
X
X
X
X
L
H
H
H
H
L
H
H
H
L
L
H
H
L
H
L
H
H
L
L
L
H
L
H
H
L
H
L
H
L
L
H
L
L
H
L
H
L
L
L
L
L
H
H
H
L
L
H
H
L
L
L
H
L
H
L
L
H
L
L
L
L
L
H
H
L
L
L
H
L
L
L
L
L
H
L
L
L
L
L
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
Min.
Max.
Unit
IDDZZ
Snooze mode standby current
ZZ > VDD − 0.2V
40
mA
tZZS
Device operation to ZZ
ZZ > VDD − 0.2V
2tCYC
ns
tZZREC
ZZ recovery time
ZZ < 0.2V
2tCYC
ns
tZZI
ZZ active to snooze current
This parameter is sampled
2tCYC
ns
tRZZI
ZZ inactive to exit snooze current This parameter is sampled
0
ns
Note:
9. Table only lists a partial listing of the byte write combinations. Any combination of BWX is valid. Appropriate write will be done on which byte write is active.
Document #: 38-05524 Rev. *A
Page 6 of 15
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