CY7C1351G(2012) View Datasheet(PDF) - Cypress Semiconductor
Part Name
Description
Manufacturer
CY7C1351G
(Rev.:2012)
(Rev.:2012)
Cypress Semiconductor
CY7C1351G Datasheet PDF : 20 Pages
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CY7C1351G
Electrical Characteristics (continued)
Over the Operating Range
Parameter [9, 10]
Description
ISB3
Automatic CE power-down
current – CMOS inputs
ISB4
Automatic CE power-down
current – TTL inputs
Test Conditions
Min
VDD = Max, device deselected, 7.5-ns cycle,
–
VIN > VDDQ – 0.3 V or VIN < 0.3 V, 133 MHz
f = fMAX, inputs switching
10-ns cycle,
–
100 MHz
VDD = Max, device deselected, All speeds
–
VIN > VIH or V IN < VIL,
f = 0, inputs static
Max Unit
75
mA
65
mA
45
mA
Capacitance
Parameter [11]
Description
CIN
CCLOCK
CI/O
Input capacitance
Clock input capacitance
I/O capacitance
Thermal Resistance
Parameter [11]
Description
ï‘JA
Thermal resistance
(junction to ambient)
ï‘JC
Thermal resistance
(junction to case)
Test Conditions
TA = 25 °C, f = 1 MHz,
VDD = 3.3 V, VDDQ=3.3 V
100-pin TQFP
Max
Unit
5
pF
5
pF
5
pF
Test Conditions
100-pin TQFP
Package
Unit
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA/JESD51.
30.32
6.85
°C/W
°C/W
Note
11. Tested initially and after any design or process changes that may affect these parameters.
Document Number: 38-05513 Rev. *K
Page 10 of 20
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