CY7C1353G(2007) View Datasheet(PDF) - Cypress Semiconductor
Part Name
Description
Manufacturer
CY7C1353G
(Rev.:2007)
(Rev.:2007)
Cypress Semiconductor
CY7C1353G Datasheet PDF : 13 Pages
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CY7C1353G
Linear Burst Address Table (MODE = GND)
First
Address
A1, A0
00
01
10
11
Second
Address
A1, A0
01
10
11
00
Third
Address
A1, A0
10
11
00
01
Fourth
Address
A1, A0
11
00
01
10
Interleaved Burst Address Table
(MODE = Floating or VDD)
First
Address
A1, A0
Second
Address
A1, A0
Third
Address
A1, A0
00
01
10
01
00
11
10
11
00
11
10
01
Fourth
Address
A1, A0
11
10
01
00
ZZ Mode Electrical Characteristics
Parameter
IDDZZ
tZZS
tZZREC
tZZI
tRZZI
Description
Sleep mode standby current
Device operation to ZZ
ZZ recovery time
ZZ active to sleep current
ZZ inactive to exit sleep current
Truth Table [2, 3, 4, 5, 6, 7, 8]
Test Conditions
ZZ > VDD − 0.2V
ZZ > VDD − 0.2V
ZZ < 0.2V
This parameter is sampled
This parameter is sampled
Min
2tCYC
0
Max
40
2tCYC
2tCYC
Unit
mA
ns
ns
ns
ns
Operation
Deselect Cycle
Address
Used CE1 CE2 CE3 ZZ ADV/LD WE BWX OE CEN CLK
None H X X L
L
X X X L L->H
DQ
Tri-State
Deselect Cycle
None X X H L
L
X X X L L->H Tri-State
Deselect Cycle
None X L X L
L
X X X L L->H Tri-State
Continue Deselect Cycle
None X X X L
H
X X X L L->H Tri-State
READ Cycle (Begin Burst)
External L H L L
L
H X L L L->H Data Out (Q)
READ Cycle (Continue Burst)
Next
X X XL
H
X X L L L->H Data Out (Q)
NOP/DUMMY READ (Begin
External L H L L
L
Burst)
H X H L L->H Tri-State
DUMMY READ (Continue Burst) Next
X X XL
H
X X H L L->H Tri-State
WRITE Cycle (Begin Burst)
External L H L L
L
L L X L L->H Data In (D)
WRITE Cycle (Continue Burst)
Next
X X XL
H
X L X L L->H Data In (D)
NOP/WRITE ABORT (Begin
Burst)
None L H L L
L
L H X L L->H Tri-State
WRITE ABORT (Continue Burst) Next
X X XL
H
X H X L L->H Tri-State
IGNORE CLOCK EDGE (Stall) Current X X X L
X
X X X H L->H
–
SLEEP MODE
None X X X H
X
X X X X X Tri-State
Notes:
2. X =”Don't Care.” H = Logic HIGH, L = Logic LOW. BWx = L signifies at least one Byte Write Select is active, BWx = Valid signifies that the desired byte write
selects are asserted, see truth table for details.
3. Write is defined by BWX, and WE. See truth table for Read/Write.
4. When a write cycle is detected, all IOs are tri-stated, even during byte writes.
5. The DQs and DQP[A:B] pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
6. CEN = H, inserts wait states.
7. Device powers up deselected and the IOs in a tri-state condition, regardless of OE.
8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQs and DQP[A:B] = tri-state when OE
is inactive or when the device is deselected, and DQs and DQP[A:B] = data when OE is active.
Document #: 38-05515 Rev. *E
Page 5 of 13
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