CY7C1353G(2007) View Datasheet(PDF) - Cypress Semiconductor
Part Name
Description
Manufacturer
CY7C1353G
(Rev.:2007)
(Rev.:2007)
Cypress Semiconductor
CY7C1353G Datasheet PDF : 13 Pages
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CY7C1353G
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VDD Relative to GND........ –0.5V to +4.6V
Supply Voltage on VDDQ Relative to GND ...... –0.5V to +VDD
DC Voltage Applied to Outputs
in tri-state ............................................ –0.5V to VDDQ + 0.5V
DC Input Voltage ................................... –0.5V to VDD + 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch up Current.................................................... > 200 mA
Operating Range
Ambient
Range Temperature (TA)
VDD
VDDQ
Commercial 0°C to +70°C 3.3V – 5%/+10% 2.5V – 5%
Industrial −40°C to +85°C
to VDD
Electrical Characteristics Over the Operating Range [10,11]
Parameter
Description
VDD
VDDQ
VOH
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
VOL
Output LOW Voltage
VIH
Input HIGH Voltage
Input HIGH Voltage
VIL
Input LOW Voltage[10]
Input LOW Voltage[10]
IX
Input Leakage Current
except ZZ and MODE
Input Current of MODE
Input Current of ZZ
IOZ
Output Leakage Current
IDD
VDD Operating Supply
Current
ISB1
Automatic CE Power down
Current—TTL Inputs
ISB2
Automatic CE Power down
Current—CMOS Inputs
ISB3
Automatic CE Power down
Current—CMOS Inputs
ISB4
Automatic CE Power down
Current—TTL Inputs
Test Conditions
for 3.3V IO, IOH = –4.0 mA
for 2.5V IO, IOH = –1.0 mA
for 3.3V IO, IOH = 8.0 mA
for 2.5V IO, IOH = 1.0 mA
for 3.3V IO
for 2.5V IO
for 3.3V IO
for 2.5V IO
GND ≤ VI ≤ VDDQ
Input = VSS
Input = VDD
Input = VSS
Input = VDD
GND ≤ VI ≤ VDDQ, Output Disabled
VDD = Max., IOUT = 0 mA,
f = fMAX= 1/tCYC
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
VDD = Max, Device Deselected, 7.5-ns cycle, 133 MHz
VIN ≥ VIH or VIN ≤ VIL, f = fMAX, 10-ns cycle, 100 MHz
inputs switching
VDD = Max, Device Deselected, All speeds
VIN ≥ VDD – 0.3V or VIN ≤ 0.3V,
f = 0, inputs static
VDD = Max, Device Deselected, 7.5-ns cycle, 133 MHz
VIN ≥ VDDQ – 0.3V or VIN ≤ 0.3V, 10-ns cycle, 100 MHz
f = fMAX, inputs switching
VDD = Max, Device Deselected, All speeds
VIN ≥ VDD – 0.3V or VIN ≤ 0.3V,
f = 0, inputs static
Min
3.135
2.375
2.4
2.0
2.0
1.7
–0.3
–0.3
−5
–30
–5
–5
Max Unit
3.6
V
VDD
V
V
V
0.4
V
0.4
V
VDD + 0.3V V
VDD + 0.3V V
0.8
V
0.7
V
5
µA
µA
5
µA
µA
30
µA
5
µA
225 mA
205 mA
90
mA
80
mA
40
mA
75
mA
65
mA
45
mA
Notes:
10. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC)> –2V (Pulse width less than tCYC/2).
11. TPower-up: Assumes a linear ramp from 0V to VDD (min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
Document #: 38-05515 Rev. *E
Page 7 of 13
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