CY7C1353G(2007) View Datasheet(PDF) - Cypress Semiconductor

Part Name

Description

Manufacturer

CY7C1353G
(Rev.:2007)

4-Mbit (256K x 18) Flow-through SRAM with NoBL™ Architecture

Cypress Semiconductor 

CY7C1353G

Capacitance[12]

Parameter

CIN

CCLOCK

CIO

Thermal Resistance[12]

Description

Input Capacitance

Clock Input Capacitance

IO Capacitance

Test Conditions

TA = 25°C, f = 1 MHz,

VDD = 3.3V

VDDQ=3.3V

Parameters

ΘJA

ΘJC

Description

Thermal Resistance

(Junction to Ambient)

Thermal Resistance

(Junction to Case)

.

AC Test Loads and Waveforms

Test Conditions

Test conditions follow standard test methods and

procedures for measuring thermal impedance,

according to EIA/JESD51.

100 TQFP

Max

5

5

5

100 TQFP

Package

30.32

6.85

Unit

pF

pF

pF

Unit

°C/W

°C/W

3.3V IO Test Load

OUTPUT

Z0 = 50Ω

3.3V

OUTPUT

RL = 50Ω

5 pF

R = 317Ω

R = 351Ω

(aV)T = 1.5V

2.5V IO Test Load

INCLUDING

JIG AND

SCOPE

OUTPUT

2.5V

Z0 = 50Ω

OUTPUT

RL = 50Ω

5 pF

VT = 1.25V

INCLUDING

JIG AND

SCOPE

(a)

(b)

R = 1667Ω

R =1538Ω

(b)

Note:

12.Tested initially and after any design or process changes that may affect these parameters.

VDDQ

GND

ALL INPUT PULSES

10%

90%

≤ 1ns

(c)

VDDQ

GND

ALL INPUT PULSES

10%

90%

≤ 1ns

(c)

90%

10%

≤ 1ns

90%

10%

≤ 1ns

Document #: 38-05515 Rev. *E

Page 8 of 13

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