CY7C199C-15VC View Datasheet(PDF) - Cypress Semiconductor
Part Name
Description
Manufacturer
CY7C199C-15VC Datasheet PDF : 12 Pages
| |||
CY7C199C
Parameter
Description
tSA
Address Set–Up to Write
Start
tPWE
tSD
tHD
tHZWE
tLZWE
WE Pulse Width
Data Set–Up to Write End
Data Hold from Write End
WE LOW to High Z
WE HIGH to Low Z
Data Retention Characteristics9
12 ns
Min Max
0
–
8
–
8
–
0
–
–
7
3
–
15 ns
Min Max
0
–
9
–
9
–
0
–
–
7
3
–
20 ns
Min Max
0
–
15
–
10
–
0
–
–
10
3
–
25 ns
Min Max Unit
0
–
ns
15
–
ns
10
–
ns
0
–
ns
–
10 ns
3
–
ns
Parameter
VDR
ICCDR
tCDR
tR
Description
VCC for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Timing Waveforms
Data Retention Waveform
Condition
VCC = VDR=2.0V, CE ≥ VCC – 0.3V, VIN ≥
VCC – 0.3V or VIN ≤ 0.3V
ALL
Min
Max
Unit
2.0
–
V
–
150
uA
0
–
ns
200
–
us
VCC
DATA RETENTION MODE
tCDR
tR
CE
Read Cycle No. 1 10 11
Address
Data Out
tRC
tAA
tOHA
Previous Data Valid
Data Valid
Notes:
9. L–version only.
10. Device is continuously selected. OE = VIL = CE.
11. WE is HIGH for Read Cycle.
Document #: 38-05408 Rev. *A
Page 7 of 12
Share Link: 