MT48LC128M4A2(2002) View Datasheet(PDF) - Micron Technology
Part Name
Description
Manufacturer
MT48LC128M4A2 Datasheet PDF : 55 Pages
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ADVANCE
512Mb: x4, x8, x16
SDRAM
PIN DESCRIPTIONS
PIN NUMBERS
SYMBOL TYPE
DESCRIPTION
38
CLK
Input Clock: CLK is driven by the system clock. All SDRAM input signals are
sampled on the positive edge of CLK. CLK also increments the internal
burst counter and controls the output registers.
37
CKE
Input Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CLK signal.
Deactivating the clock provides PRECHARGE POWER-DOWN and SELF
REFRESH operation (all banks idle), ACTIVE POWER-DOWN (row active in
any bank) or CLOCK SUSPEND operation (burst/access in progress). CKE is
synchronous except after the device enters power-down and self refresh
modes, where CKE becomes asynchronous until after exiting the same
mode. The input buffers, including CLK, are disabled during power-down
and self refresh modes, providing low standby power. CKE may be tied
HIGH.
19
CS#
Input Chip Select: CS# enables (registered LOW) and disables (registered HIGH)
the command decoder. All commands are masked when CS# is registered
HIGH. CS# provides for external bank selection on systems with multiple
banks. CS# is considered part of the command code.
18, 17, 16
RAS#, CAS#, Input Command Inputs: RAS#, CAS#, and WE# (along with CS#) define the
WE#
command being entered.
39
15, 39
x4, x8: DQM
x16: DQML,
DQMH
Input
Input/Output Mask: DQM is an input mask signal for write accesses and
an output enable signal for read accesses. Input data is masked when
DQM is sampled HIGH during a WRITE cycle. The output buffers are
placed in a High-Z state (two-clock latency) when DQM is sampled HIGH
during a READ cycle. On the x4 and x8, DQML (Pin 15) is a NC and DQMH
is DQM. On the x16, DQML corresponds to DQ0-DQ7 and DQMH
corresponds to DQ8-DQ15. DQML and DQMH are considered same state
when referenced as DQM.
20, 21
BA0, BA1
Input Bank Address Inputs: BA0 and BA1 define to which bank the ACTIVE,
READ, WRITE, or PRECHARGE command is being applied.
23-26, 29-34, 22, 35, 36 A0–A12
Input
Address Inputs: A0-A12 are sampled during the ACTIVE command (row-
address A0-A12) and READ/WRITE command (column-address A0-A9, A11,
A12 [x4]; A0-A9, A11 [x8]; A0-A9 [x16]; with A10 defining auto precharge)
to select one location out of the memory array in the respective bank.
A10 is sampled during a PRECHARGE command to determine if all banks
are to be precharged (A10 [HIGH]) or bank selected by (A10 [LOW]). The
address inputs also provide the op-code during a LOAD MODE REGISTER
command.
2, 4, 5, 7, 8, 10, 11, 13, 42, DQ0–DQ15 x16: I/O Data Input/Output: Data bus for x16 (4, 7, 10, 13, 15, 42, 45, 48, and 51 are
44, 45, 47, 48, 50, 51, 53
NCs for x8; and 2, 4, 7, 8, 10, 13, 15, 42, 45, 47, 48, 51, and 53 are NCs for x4).
2, 5, 8, 11, 44, 47, 50, 53 DQ0–DQ7 x8: I/O Data Input/Output: Data bus for x8 (2, 8, 47, and 53 are NCs for x4).
5, 11, 44, 50
DQ0–DQ3 x4: I/O Data Input/Output: Data bus for x4.
40
NC
– No Connect: This pin should be left unconnected.
3, 9, 43, 49
VDDQ
Supply DQ Power: Isolated DQ power to the die for improved noise immunity.
6, 12, 46, 52
VSSQ
Supply DQ Ground: Isolated DQ ground to the die for improved noise immunity.
1, 14, 27
VDD
Supply Power Supply: +3.3V ±0.3V.
28, 41, 54
VSS
Supply Ground.
512Mb: x4, x8, x16 SDRAM
512MSDRAM_D.p65 – Rev. D; Pub 1/02
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.
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