D2003UK View Datasheet(PDF) - Semelab - > TT Electronics plc
Part Name
Description
Manufacturer
D2003UK Datasheet PDF : 4 Pages
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TetraFET
D2003UK
MECHANICAL DATA
AD
B
H
C
23
G
1
E
54
F
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 1GHz
PUSH–PULL
I
PIN 1
PIN 3
PIN 5
NM
O
DQ
SOURCE (COMMON) PIN 2
DRAIN 2
PIN 4
GATE 1
JK
DRAIN 1
GATE 2
DIM mm
A 16.38
B
1.52
C
45°
D
6.35
E
3.30
F 14.22
G 1.27 x 45°
H
1.52
I
6.35
J
0.13
K
2.16
M
1.52
N
5.08
O 18.90
Tol.
0.26
0.13
5°
0.13
0.13
0.13
0.13
0.13
0.13
0.02
0.13
0.13
MAX
0.13
Inches
0.645
0.060
45°
0.250
0.130
0.560
0.05 x 45°
0.060
0.250
0.005
0.085
0.060
0.200
0.744
Tol.
0.010
0.005
5°
0.005
0.005
0.005
0.005
0.005
0.005
0.001
0.005
0.005
MAX
0.005
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from 50 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
Power Dissipation
35W
BVDSS
Drain – Source Breakdown Voltage *
65V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
1A
Tstg
Storage Temperature
–65 to 150°C
Tj
Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.01/01
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