DCR3650Y28 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
Manufacturer
DCR3650Y28 Datasheet PDF : 9 Pages
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SEMICONDUCTOR
DCR1840Y85
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min. Max. Units
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125° C
dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125° C, gate open
dI/dt Rate of rise of on-state current
From 67% VDRM to 2x IT(AV) Repetitive 50Hz
Gate source 30V, 10Ω,
Non-repetitive
tr < 0.5µs, Tj = 125° C
VT(TO) Threshold voltage – Low level
100A to1000A at Tcase = 125° C
Threshold voltage – High level
1000A to 7200A at Tcase = 125° C
rT
On-state slope resistance – Low level
100A to 1000A at Tcase = 125° C
On-state slope resistance – High level
1000A to 7200A at Tcase = 125° C
tgd
Delay time
VD = 67% VDRM, gate source 30V, 10Ω
tr = 0.5µs, Tj = 25° C
tq
Turn-off time
Tj = 125° C, VR = 200V, dI/dt = 1A/µs,
dVDR/dt = 20V/µs linear
QS
Stored charge
IT = 2000A, Tj = 125° C,dI/dt – 1A/µs,
IL
Latching current
Tj = 25° C, VD = 5V
-
-
-
-
-
-
-
-
TBD
-
4800
TBD
300
1500
150
300
0.9
1.3
0.888
0.55
TBD
1200
8000
TBD
mA
V/µs
A/µs
A/µs
V
V
mΩ
mΩ
µs
µs
µC
mA
IH
Holding current
Tj = 25° C, RG-K = ∞, ITM = 500A, IT = 5A
TBD TBD
mA
3/9
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