DG417 View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
DG417 Datasheet PDF : 16 Pages
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DG417, DG418, DG419
Vishay Siliconix
APPLICATIONS
Micropower UPS Transfer Switch
When VCC drops to 3.3 V, the DG417 changes states,
closing SW1 and connecting the backup cell, as shown in
Figure 10. D1 prevents current from leaking back towards the
rest of the circuit. Current consumption by the CMOS analog
switch is around 100 pA; this ensures that most of the power
available is applied to the memory, where it is really needed.
In the stand-by mode, hundreds of A are sufficient to retain
memory data.
When the 5 V supply comes back up, the resistor divider
senses the presence of at least 3.5 V, and causes a new
change of state in the analog switch, restoring normal
operation.
Programmable Gain Amplifier
The DG419, as shown in figure 11, allows accurate gain
selection in a small package. Switching into virtual ground
reduces distortion caused by RDS(on) variation as a function
of analog signal amplitude.
GaAs FET Driver
The DG419, as shown in figure 12 may be used as a GaAs
FET driver. It translates a TTL control signal into - 8 V, 0 V
level outputs to drive the gate.
VCC
(5 V)
D1
R1
VSENSE
453 k
Memory
R2
383 k
V+ SW1 VL
D
S
DG417
IN
GND
V-
+
3 V Li Cell
–
Figure 11. Micropower UPS Circuit
DG419
S1
R1
S2
R2
IN
D
VIN
-
+
5V
VOUT
Figure 12. Programmable Gain Amplifier
+5V
VL
S1
S2
V+
GaAs FET
D VOUT
GND
DG419
V-
-8V
Figure 13. GaAs FET Driver
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70051.
www.vishay.com
10
Document Number: 70051
S10-1528-Rev. G, 19-Jul-10
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