DMC2004DWK-7 View Datasheet(PDF) - Diodes Incorporated.
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Description
Manufacturer
DMC2004DWK-7 Datasheet PDF : 8 Pages
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DMC2004DWK
Electrical Characteristics N-CHANNEL – Q1 @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min
Typ
Max
Unit
Test Condition
BVDSS
20
V VGS = 0V, ID = 10A
IDSS
1
A VDS = 16V, VGS = 0V
IGSS
1
A VGS = ±4.5V, VDS = 0V
VGS(th)
0.5
1.0
V VDS = VGS, ID = 250A
RDS (ON)
0.4
0.55
0.5
0.70
0.7
0.90
VGS = 4.5V, ID = 540mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 350mA
|Yfs|
200
mS VDS =10V, ID = 0.2A
VSD
0.5
1.2
V VGS = 0V, IS = 115mA
Ciss
Coss
Crss
150
pF
25
pF
VDS = 16V, VGS = 0V
f = 1.0MHz
20
pF
Electrical Characteristics P-CHANNEL – Q2 @TA = 25°C unless otherwise specified
Characteristic
Symbol Min
Typ
Max
Unit
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
BVDSS
-20
IDSS
IGSS
VGS(th)
-0.5
RDS (ON)
V
-1.0
A
1.0
A
-1.0
V
0.7
0.9
1.1
1.4
1.7
2.0
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
|Yfs|
200
mS
VSD
-0.5
-1.2
V
Ciss
Coss
Crss
175
pF
30
pF
20
pF
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Test Condition
VGS = 0V, ID = -250A
VDS = -20V, VGS = 0V
VGS = ±4.5V, VDS = 0V
VDS = VGS, ID = -250A
VGS = -4.5V, ID = -430mA
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
VDS =10V, ID = 0.2A
VGS = 0V, IS = -115mA
VDS = -16V, VGS = 0V
f = 1.0MHz
DMC2004DWK
Document number: DS31114 Rev. 5 - 2
2 of 8
www.diodes.com
October 2019
© Diodes Incorporated
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