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DS1842A View Datasheet(PDF) - Maxim Integrated

Part Name
Description
Manufacturer
DS1842A Datasheet PDF : 6 Pages
1 2 3 4 5 6
76V, APD, Bias Output Stage with
Current Monitoring
ABSOLUTE MAXIMUM RATINGS
Voltage Range on GATE and CLAMP
Relative to GND...................................................-0.3V to +12V
Voltage Range on MIRIN, MIROUT, FBIN
MIR1, and MIR2 Relative to GND........................-0.3V to +80V
Voltage Range on FBOUT Relative to GND ..........-0.3V to +6.0V
Voltage Range on LX Relative to GND...................-0.3V to +85V
Operating Junction Temperature Range ...........-40°C to +150°C
Storage Temperature Range .............................-55°C to +135°C
Soldering Temperature ..........................Refer to the IPC JEDEC
J-STD-020 Specification.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(TA = -40°C to +85°C, unless otherwise noted.)
PARAMETER
Switching Frequency
FET Capacitance
FET Gate Resistance
FET On-Resistance
GATE Voltage
Switching Current
LX Voltage
LX Leakage
CLAMP Voltage
CLAMP Threshold
Maximum MIROUT Current
MIR1 to MIROUT Ratio
MIR2 to MIROUT Ratio
MIR1, MIR2 Rise Time
(20%/80%)
SYMBOL
fSW
CGATE
CLX
RG
RDSON
VGS
ILX
VLX
IIL(LX)
VCLAMP
VCLT
IMIROUT
KMIR1
KMIR2
CONDITIONS
VGS = 0V, VDS = 25V
fSW = 1MHz
VGS = 3V, ID = 170mA
VGS = 10V, ID = 170mA
Duty cycle = 10%, fSW = 100kHz
VGATE = 0V, VLX = 76V
CLAMP = low
CLAMP = high
15V < VMIRIN < 76V, IMIROUT > 1μA
15V < VMIRIN < 76V, IMIROUT > 1μA
tRC
(Note 1)
Shutdown Temperature
Hysteresis Temperature
Leakage on GATE and CLAMP
Resistor-Divider Ratio (R1/R2)
Resistor-Divider Tempco
Resistor-Divider End-to-End
Resistance
TSHDN
THYS
IIL
KR
(Note 2)
(Note 2)
TA = +25°C, VFBIN = 76V
RRES TA = +25°C, VFBIN = 76V
Note 1: Rising MIROUT transition from 10µA to 1mA; VMIRIN = 40V, 2.5kΩ load.
Note 2: Not production tested. Guaranteed by design.
MIN
0
0
-1
0
1.25
1.8
0.096
0.192
TYP
40
90
22
1
0.75
1.8
2.75
0.100
0.200
MAX
1.2
2
1.4
11
680
80
+1
11
2.35
3.85
10
0.104
0.208
UNITS
MHz
pF


V
mA
V
μA
V
V
mA
μA
A/A
A/A
30
ns
+150
°C
5
°C
-1
+1
μA
59.5
60.25
±50
ppm/°C
308 385 481
k
2 _______________________________________________________________________________________

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