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RMPA39100 View Datasheet(PDF) - Raytheon Company

Part Name
Description
Manufacturer
RMPA39100
Raytheon
Raytheon Company Raytheon
RMPA39100 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
RMPA39100
37-40 GHz 1 Watt Power Amplifier MMIC
Figure 3
Schematic of
Application Circuit
Drain Supply (Vd= +5 V)
(Connect to both VDA & VDB)
10,000pF
Bond Wire Ls
MMIC Chip
L 100pF
L
PRODUCT INFORMATION
RF IN
RF OUT
Figure 4
Recommended
Assembly and Bonding
Diagram
L
Ground
(Back of Chip) 100pF L
10,000pF
Gate Supply (Vg)
(VGA and/or VGB)
Bond Wire Ls
Vg
(Negative)
Vd
(Positive)
2 mil Gap
5mil Thick
Alumina
50-Ohm
RF
Input
10,000pF 10,000pF
100pF
100pF
Die-Attach
80Au/20Sn
5 mil Thick
Alumina
50-Ohm
RF
Output
www.raytheonrf.com
100pF
100pF
10,000pF
10,000pF
L< 0.015”
(4 Places)
Vg
(Negative)
Vd
(Positive)
Note: Use 0.003” x 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Characteristic performance data and specifications are subject to change without notice.
Revised December 17, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

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