DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

RMPA39200 View Datasheet(PDF) - Raytheon Company

Part Name
Description
Manufacturer
RMPA39200
Raytheon
Raytheon Company Raytheon
RMPA39200 Datasheet PDF : 6 Pages
1 2 3 4 5 6
RMPA39200
37-40 GHz 1.6 Watt Power Amplifier MMIC
Description
Features
PRODUCT INFORMATION
The Raytheon RMPA39200 is a high efficiency power amplifier designed for use in point to point radio, point to
multi-point communications, LMDS and other millimeter wave applications. The RMPA39200 is a 3-stage GaAs
MMIC amplifier utilizing Raytheon’s advanced 0.15µm gate length Power PHEMT process and can be used in
conjunction with other driver or power amplifiers to achieve the required total power output.
19 dB small signal gain (typ.)
32 dBm power out (typ.)
Circuit contains individual source vias
Chip Size 4.28 mm x 3.19 mm
Absolute
Maximum
Ratings
Parameter
Positive DC Voltage (+5 V Typical)
Negative DC Voltage
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50 source)
Operating Base plate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vg
Vdg
Id
Pin
Tc
Tstg
Rjc
Value
+6
-2
+8
2352
20
-30 to +85
-55 to +125
8
Unit
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Electrical
Characteristics
(At 25°C) 50 system,
Vd=+5 V, Quiescent
current (Idq) = 1600 mA
Parameter
Min
Frequency Range
37
Gate Supply Voltage (Vg)1
Gain Small Signal
(f=37-38.5 GHz)
17
(f=38.5-40 GHz)
16
(Pin=0 dBm)
Gain Variation vs.
Frequency
Power Output
at 1 dB Compression
(f=37-38.5 GHz)
(f=38.5-40 GHz)
Power Output Saturated:
(f=37-38.5 GHz)
31
(f=38.5-40 GHz)
30
(Pin=+16 dBm)
Typ Max Unit
40 GHz
-0.2
V
19
dB
17
dB
+/-1.5
dB
31
dBm
30
dBm
32
dBm
31
dBm
Parameter
Drain Current
at Pin=0 dBm
Drain Current
at P1 dB Compression
Power Added Efficiency
(PAE) at P1dB
OIP3 (17 dBm/Tone)
(10 MHz Tone Sep.)
Input Return Loss
(Pin=0 dBm)
Output Return Loss
(Pin=0 dBm)
Min Typ
1600
1700
17
37
10
10
Max Unit
mA
mA
%
dBm
dB
dB
www.raytheonrf.com
Note:
1. Typical range of the negative gate voltages is -0.5 to 0.0V to set typical Idq of 1600 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised January 25, 2002
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]