DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

RMPA39200 View Datasheet(PDF) - Raytheon Company

Part Name
Description
Manufacturer
RMPA39200
Raytheon
Raytheon Company Raytheon
RMPA39200 Datasheet PDF : 6 Pages
1 2 3 4 5 6
RMPA39200
37-40 GHz 1.6 Watt Power Amplifier MMIC
Recommended
Procedure
for Biasing and
Operation
PRODUCT INFORMATION
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the ground
of the chip carrier. Slowly apply negative gate
bias supply voltage of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +5 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=1600 mA.
Step 5: After the bias condition is established, the RF
input signal may now be applied at the
appropriate frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power.
(ii) Turn down and off drain voltage (Vd).
(iii) Turn down and off gate bias voltage (Vg).
Note:
An example auto bias sequencing circuit to apply negative gate voltage and positive drain voltage for the above procedure is shown below.
www.raytheonrf.com
Characteristic performance data and specifications are subject to change without notice.
Revised January 25, 2002
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]