RMPA39000 View Datasheet(PDF) - Raytheon Company
Part Name
Description
Manufacturer
RMPA39000 Datasheet PDF : 5 Pages
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RMPA39000
37-40 GHz GaAs MMIC Power Amplifier
Figure 3
Recommended
Application Schematic
Circuit Diagram
10,000 pF
PRODUCT INFORMATION
Drain Supply (Vd= +5V)
(Connect to both VDA & VDB)
Bond Wire L’s
MMIC Chip
L
100 pF
L
RF IN
RF OUT
Figure 4
Recommended
Assembly and Bonding
Diagram
Ground
100 pF
L
(Back of Chip)
L
Bond Wire L’s
Gate Supply (Vg) 10,000 pF
(VGA and/or VGB)
Vg
(Negative)
2 mil Gap
5mil Thk
Alumina
50-Ohm
10,000 pF
100 pF
10,000 pF
100 pF
RF
Input
Vd
(Positive)
Die-Attach
80Au/20Sn
5 mil Thk
Alumina
50-Ohm
RF
Output
www.raytheonrf.com
100 pF
100 pF
L< 0.015”
(4 Plcs)
Cap
10,000 pF
Vg
(Negative)
Vd
(Positive)
10,000 pF
Note:
Use 0.003” x 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Characteristic performance data and specifications are subject to change without notice.
Revised December 17, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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