DS2251 View Datasheet(PDF) - Dallas Semiconductor -> Maxim Integrated
Part Name
Description
Manufacturer
DS2251 Datasheet PDF : 20 Pages
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DS2251T
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Voltage on VCC Relative to Ground
Operating Temperature
Storage Temperature2
Soldering Temperature
-0.3V to (VCC + 0.5V)
-0.3V to +6.0V
-40°C to +85°C
-55°C to +125°C
260°C for 10 seconds
1This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
2Storage temperature is defined as the temperature of the device when VCC=0V and VLI=0V. In this state
the contents of SRAM are not battery-backed and are undefined.
DC CHARACTERISTICS
PARAMETER
Input Low Voltage
Input High Voltage
Input High Voltage RST, XTAL1 PROG
Output Low Voltage
@ IOL=1.6 mA (Ports 1, 2, 3, PF )
Output Low Voltage
@ IOL=3.2 mA (Ports 0, ALE, PSEN ,
BA13-0, BD7-0, R/ W , PE 3-4)
Output High Voltage
@ IOH= -80 µA (Ports 1, 2, 3)
Output High Voltage
@ IOH=-400 µA (Ports 0, ALE, PSEN ,
PF , BA13-0, BD7-0, R/ W , PE 3-4)
Input Low Current VIN = 0.45V
(Ports 1, 2, 3)
Transition Current; 1 to 0
VIN = 2.0V (Ports 1, 2, 3)
Input Leakage Current
0.45 < VIN < VCC (Port 0)
RST Pulldown Resistor
VRST Pullup Resistor
PROG Pullup Resistor
Power-Fail Warning Voltage
Minimum Operating Voltage
Operating Current @ 16 MHz
Idle Mode Current @ 12 MHz
Stop Mode Current
SYMBOL
VIL
VIH1
VIH2
VOL1
(tA=0˚C to70˚C; VCC=5V ± 10%)
MIN TYP MAX UNITS NOTES
-0.3
+0.8
V
1
2.0
VCC+0.3 V
1
3.5
VCC+0.3 V
1
0.15 0.45
V
1, 7
VOL2
0.15 0.45
V
1
VOH1
2.4 4.8
V
1
VOH2
2.4 4.8
V
1
IIL
-50
µA
ITL
-500
µA
IIL
±10
µA
RRE
40
150
kΩ
RVR
4.7
kΩ
RPR
40
kΩ
VPFW
4.25 4.37 4.50
V
1
VCCmin 4.00 4.12 4.25
V
1
ICC
45
mA
2
IIDLE
7.0
mA
3
ISTOP
80
µA
4
9 of 20
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