DTD113ZL(2005) View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

Manufacturer

DTD113ZL
(Rev.:2005)

NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS)

Unisonic Technologies 

DTD113Z

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Supply Voltage

VCC

50

V

Input Voltage

VIN

-5 ~ +10

V

Output Current

IOUT

500

mA

Power Dissipation

PC

200

mW

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL SPECIFICATIONS (Ta=25°C, unless others specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Input Voltage

VIN(OFF) VCC =5V, IOUT =100μA

VIN(ON) VOUT =0.3V, IOUT =20mA

Output Voltage

VOUT(ON) IOUT/IIN =50mA/2.5mA

Input Current

IIN

VIN=5V

Output Current

IOUT(OFF) VCC =50V, VIN =0V

DC Current Gain

hFE VOUT =5V, IOUT =50mA

Input Resistance

R1

Resistor Ratio

R2/R1

Transition Frequency

fT

VCE =10V, IE =−50mA, f=100MHz

Note: Transition frequency of the device

MIN TYP MAX UNIT

0.3

V

1.5

0.1 0.3 V

7.2 mA

0.5 μA

82

0.7 1 1.3 KΩ

8

10 12

200

MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R206-082,C

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