DTD113Z
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
VCC
50
V
Input Voltage
VIN
-5 ~ +10
V
Output Current
IOUT
500
mA
SOT-23/SOT-323
200
mW
Power Dissipation
SOT-523
PC
150
mW
TO-92
625
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL SPECIFICATIONS (TA=25°C, unless others specified)
PARAMETER
SYMBOL
Input Voltage
VIN(OFF)
VIN(ON)
Output Voltage
VOUT(ON)
Input Current
IIN
Output Current
IOUT(OFF)
DC Current Gain
hFE
Input Resistance
R1
Resistor Ratio
R2/R1
Transition Frequency
fT
Note: Transition frequency of the device
TEST CONDITIONS
MIN
VCC =5V, IOUT =100μA
VOUT =0.3V, IOUT =20mA
1.5
IOUT/IIN =50mA/2.5mA
VIN=5V
VCC =50V, VIN =0V
VOUT =5V, IOUT =50mA
82
0.7
8
VCE =10V, IE =−50mA, f=100MHz (Note)
TYP
0.1
1
10
200
MAX UNIT
0.3
V
0.3 V
7.2 mA
0.5 μA
1.3 KΩ
12
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-082.F