ECH8612 View Datasheet(PDF) - SANYO -> Panasonic
Part Name
Description
Manufacturer
ECH8612 Datasheet PDF : 4 Pages
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Ordering number : EN8258A
ECH8612
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH8612 General-Purpose Switching Device
Applications
Features
• Low ON-resistance.
• Best suited for load switches.
• 1.8V drive.
• Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2!0.8mm) 1unit
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
Unit
20
V
±8
V
7
A
40
A
1.3
W
1.5
W
150
°C
--55 to +150
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : FE
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±6.4V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3.5A
ID=3A, VGS=4.5V
ID=1.5A, VGS=2.5V
ID=0.5A, VGS=1.8V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
min
20
0.4
6.6
Ratings
Unit
typ
max
V
1 µA
±10 µA
1.2
V
11
S
18
24 mΩ
25
36 mΩ
35
52 mΩ
920
pF
150
pF
120
pF
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70306 / 52506 MS IM TB-00002337 / 32505PE TS IM TB-00000442 No.8258-1/4
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