RF2371 View Datasheet(PDF) - RF Micro Devices

Part Name

Description

Manufacturer

RF2371

3V LOW NOISE AMPLIFIER

RF Micro Devices 

RF2371

Preliminary

Absolute Maximum Ratings

Parameter

Supply Voltage

Supply Current

Operating Ambient Temperature

Storage Temperature

Rating

4.0

20

-40 to +85

-40 to +150

Unit

V

mA

°C

°C

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate

at the time of this printing. However, RF Micro Devices reserves the right to

make changes to its products without notice. RF Micro Devices does not

assume responsibility for the use of the described product(s).

Parameter

Specification

Unit

Min.

Typ.

Max.

Condition

4

Overall

Frequency Range

LNA Performance

700 to 2000

MHz

T =27° C, VCC=2.7V, VISELECT =0V,

VENABLE= 2.7 V

Freq = 1.95 GHz

Gain

Noise Figure

Input IP3

Input P1dB

Input VSWR

Output VSWR

Off Mode Gain

Gain

Noise Figure

Input IP3

Current Control

10.5

12.5

dB

1.6

dB

+4

+6

dBm

At 2.9mA

-14

dBm

5:1

dB

(Noise match)

1.5:1

dB

-5.0

dB

VENABLE= 0 V

17

dB

Freq = 836 MHz

1.6

dB

0

dBm

Internal Current Setting “ON”

External Current Setting “ON”

Current into ISELECT

Power Control

CMOS Low

CMOS High

1

V

Voltage on ISELECT

V

Voltage on ISELECT

µA

VISELECT=2.7 V

Power “ON” Voltage

Power “OFF” Voltage

Current into ENABLE

Power Supply

CMOS High

CMOS Low

1

V

Voltage on ENABLE

V

Voltage on ENABLE

µA

VENABLE=2.7 V

Operating Voltage

Operating Current

Leakage Current

2.7 to 3.6

2.9

5

1

V

mA

VCC=2.7V, Internal current setting

µA

VENABLE=0 V

4-222

Rev A2 010205

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