ED1702N View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

ED1702N

NPN general purpose transistor

Philips Electronics 

Philips Semiconductors

NPN general purpose transistor

Product specification

ED1702

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient

Note

1. Transistor mounted on an FR4 printed-circuit board.

CONDITIONS

note 1

VALUE

200

UNIT

K/W

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

ICBO

collector cut-off current

IEBO

emitter cut-off current

hFE

DC current gain

hFE

VCEsat

Cc

fT

DC current gain

ED1702L

ED1702M

ED1702N

ED1702O

ED1702P

collector-emitter saturation voltage

collector capacitance

transition frequency

Note

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

CONDITIONS

IE = 0; VCB = 20 V

IE = 0; VCB = 20 V; Tj = 150 °C

IC = 0; VEB = 5 V

IC = 500 mA; VCE = 1 V

IC = 100 mA; VCE = 1 V

IC = 100 mA; VCE = 1 V

IC = 500 mA; IB = 50 mA; note 1

IE = ie = 0; VCB = 10 V; f = 1 MHz

IC = 10 mA; VCE = 5 V; f = 100 MHz

MIN.

−

−

−

40

132

132

170

213

263

333

−

−

80

MAX.

100

5

500

−

476

UNIT

nA

µA

nA

189

233

300

370

476

700

mV

6

pF

−

MHz

1999 Apr 27

3

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