EDS1232AASE View Datasheet(PDF) - Elpida Memory, Inc

Part Name

Description

Manufacturer

EDS1232AASE

128M bits SDRAM(4M words ×32 bits)

Elpida Memory, Inc 

EDS1232AASE

Precharge command (/CS, /RAS, /WE = Low, /CAS = High)

This command begins precharge operation of the bank selected by BA0 and BA1. When A10 is High, all banks are

precharged, regardless of BA0 and BA1. When A10 is Low, only the bank selected by BA0 and BA1 is precharged.

After this command, the Synchronous DRAM can’t accept the activate command to the precharging bank during tRP

(precharge to activate command period). This command corresponds to a conventional DRAM’s /RAS rising.

CLK

CKE H

/CS

/RAS

/CAS

/WE

BA0, BA1

(Bank select)

A10

(Precharge select)

Add

Precharge Command

Write command (/CS, /CAS, /WE = Low, /RAS = High)

If the mode register is in the burst write mode, this command sets the burst start address given by the column

address to begin the burst write operation. The first write data in burst mode can input with this command with

subsequent data on following clocks.

CLK

CKE H

/CS

/RAS

/CAS

/WE

BA0, BA1

(Bank select)

A10

Add

Col.

Column Address and Write Command

Data Sheet E0350E20 (Ver. 2.0)

12

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