EDS1232AASE View Datasheet(PDF) - Elpida Memory, Inc

Part Name

Description

Manufacturer

EDS1232AASE

128M bits SDRAM(4M words ×32 bits)

Elpida Memory, Inc 

EDS1232AASE

Electrical Specifications

• All voltages are referenced to VSS (GND).

• After power up, execute power up sequence and initialization sequence before proper device operation is achieved

(refer to the Power up sequence).

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Note

Voltage on any pin relative to VSS

VT

–0.5 to +4.6

V

Supply voltage relative to VSS

VDD, VDDQ

–0.5 to +4.6

V

Short circuit output current

IOS

50

mA

Power dissipation

PD

1.0

W

Operating ambient temperature

TA

0 to +70

°C

Storage temperature

Tstg

–55 to +125

°C

Caution

Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

Recommended DC Operating Conditions (TA = 0 to +70°C)

Parameter

Symbol

min.

typ.

Supply voltage

VDD, VDDQ 3.0

3.3

VSS

0

0

Input high voltage

VIH

2.0



Input low voltage

VIL

–0.3*2



Notes: 1. VIH (max.) = VDDQ + 1.5V (pulse width ≤ 5ns).

2. VIL (min.) = –1.5V (pulse width ≤ 5ns).

max.

Unit

3.6

V

0

V

VDD + 0.3*1 V

0.8

V

Notes

Data Sheet E0350E20 (Ver. 2.0)

4

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