ELC-645-11-05 View Datasheet(PDF) - EPIGAP optoelectronic GmbH
Part Name
Description
Manufacturer
ELC-645-11-05 Datasheet PDF : 1 Pages
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LED - Chip
Preliminary
Radiation
Red-orange
1000
Type
solderable
ELС-645-11-05
10.04.2007
rev. 02/06
Technology
AlInGaP/GaAs
Electrodes
P (anode) up
typ. dimensions (µm)
typ. thickness
260 (±20) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 1.5 µm
PoC-05
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Forward voltage
IF = 100 mA
VF
1.9
Forward voltage
IF = 300 mA
VF
2.1
Reverse voltage
IF = 10 µA
VR
5
Radiant power1
IF = 100 mA
Φe
4.6
6.0
Radiant power1
IF = 300 mA
Φe
16
Luminous intensity1
IF = 100 mA
ΙV
225
290
Peak wavelength
IF = 100 mA
λp
635
645
Spectral bandwidth at 50% IF = 100 mA
∆λ0.5
16
Switching time
IF = 100 mA
tr, tf
40
1Measured on bare chip on TO-18 header with EPIGAP equipment
Labeling
Type
ELС-645-11-05
Lot N°
Φe(typ) [mW] VF(typ) [V]
Packing: Chips on adhesive film with wire-bond side on top
Max
Unit
2.3
V
V
V
mW
mW
mcd
655
nm
nm
ns
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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