EN25F80-75HCP View Datasheet(PDF) - Eon Silicon Solution Inc.
Part Name
Description
Manufacturer
EN25F80-75HCP Datasheet PDF : 35 Pages
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EN25F80
EN25F80
8 Megabit Serial Flash Memory with 4Kbytes Uniform Sector
FEATURES
• Single power supply operation
- Full voltage range: 2.7-3.6 volt
• Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
• 8 Mbit Serial Flash
- 8 M-bit/1024 K-byte/4096 pages
- 256 bytes per programmable page
• High performance
- 100MHz clock rate
• Low power consumption
- 12 mA typical active current
- 1 µA typical power down current
• Uniform Sector Architecture:
- 256 sectors of 4-Kbyte
- 16 blocks of 64-Kbyte
- Any sector or block can be
erased individually
• Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
• High performance program/erase speed
- Page program time: 1.3ms typical
- Sector erase time: 90ms typical
- Block erase time 500ms typical
- Chip erase time: 8 seconds typical
• Lockable 256 byte OTP security sector
• Minimum 100K endurance cycle
• Package Options
- 8 pins SOP 150mil body width
- 8 pins SOP 200mil body width
- 8 contact VDFN
- 8 pins PDIP
- All Pb-free packages are RoHS compliant
• Commercial and industrial temperature
Range
GENERAL DESCRIPTION
The EN25F80 is an 8M-bit (1024K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256
bytes at a time, using the Page Program instruction.
The EN25F80 is designed to allow either single Sector/Block at a time or full chip erase operation. The
EN25F80 can be configured to protect part of the memory as the software protected mode. The device can
sustain a minimum of 100K program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
2
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc.,
Rev. K, Issue Date: 2010/05/31
www.eonssi.com
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