ESDA25DB3RL View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
ESDA25DB3RL Datasheet PDF : 5 Pages
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ESDA25DB3
Fig. 1 : Peak power dissipation versus initial
junction tempearature.
Ppp[Tj initial]/Ppp[Tj initial=25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Tj initial(°C)
0.0
0
25
50
75
100 125 150
Fig. 2 : Peak pulse power versus exponential
pulse duration (Tj initial = 25 °C).
Ppp(W)
5000
1000
100
1
tp(µs)
10
100
Fig. 3 : Clamping voltage versus peak pulse
current (Tj initial = 25 °C).
Rectangular waveform tp = 2.5 µs.
Fig. 4 : Capacitance versus reverse applied
voltage (typical values).
Ipp(A)
50.0
10.0
tp=2.5µs
C(pF)
100
50
F=1MHz
Vosc=30mV
1.0
20
VCL(V)
VR(V)
0.1
20 25 30 35 40 45 50 55 60
10
1
2
5
10
30
Fig. 5 : Relative variation of leakagecurrent versus
junction temperature (typical values).
IR[Tj] / IR[Tj=25°C]
200
100
10
1
25
Tj(°C)
50
75
100
125
4/5
®
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