ESDA6V1S6 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
ESDA6V1S6 Datasheet PDF : 7 Pages
| |||
ESDA6V1S3 / ESDA6V2S6
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)
Symbol
Parameter
VPP
Electrostatic discharge
MIL STD 883C - Method 3015-6
PPP
Peak pulse power (8/20µs)
Tstg
Storage temperature range
Tj
Maximum junction temperature
TL
Maximum lead temperature for soldering during 10s
Value
Unit
25
kV
200
W
- 55 to + 150 °C
150
°C
260
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
Parameter
VRM
Stand-off voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current
IPP
Peak pulse current
αT
Voltage temperature coefficient
C
Capacitance
Rd
Dynamic resistance
VF
Forward voltage drop
Types
VBR @
IR
IRM @ VRM
Rd
αT
C
min. max.
max.
typ.
max.
typ.
note1
V
V
note1
note 2 note 3 0V bias
mA
µA
V
Ω
10-4/°C
pF
ESDA6V1S3 6.1
7.2
1
2
5.25
0.5
6
120
ESDA6V2S6 6.2
7.2
1
2
5.25
0.5
6
100
Note 1 : Between any I/O pin and Ground
Note 2 : Square pulse, IPP = 25A for ESDA6V1S3 and IPP = 15A for ESDA6V2S6 , tp = 2.5µs
Note 3 : ∆VBR = αT * [Tamb-25] * VBR(25°C)
VF @ IF
max.
V
mA
1.25
200
1.25
200
2/7
Share Link: 