ESDA6V1S6 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
ESDA6V1S6 Datasheet PDF : 7 Pages
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ESDA6V1S3 / ESDA6V2S6
Fig. 1 : Peak power dissipation versus initial
junction temperature.
Ppp[Tj initial]/Pp[Tj initial=25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Tj initial(°C)
0.0
0
25
50
75
100 125 150
Fig. 2 : Peak pulse power versus exponential
pulse duration (Tj initial = 25 °C).
Ppp(W)
2000
1000
100
10
1
tp(µs)
10
100
Fig. 3 : Clamping voltage versus peak pulse
current (Tj initial = 25 °C).
Rectangular waveform tp = 2.5 µs.
Ipp(A)
50.0
10.0
tp=2.5µs
Fig. 4 : Capacitance versus reverse applied
voltage (typical values).
C(pF)
100
50
F=1MHz
Vosc=30mV
1.0
20
VCL(V)
0.1
4 6 8 10 12 14 16 18 20 22 24 26 28 30 32
10
1
VR(V)
2
5
10
Fig. 5 : Relativevariation of leakagecurrent versus
junction temperature (typical values).
IR[Tj] / IR[Tj=25°C]
200
100
Fig. 6 : Peak forward voltage drop versus peak
forward current (typical values).
IFM(A)
5.00
Tj=25°C
1.00
10
1
25
0.10
Tj(°C)
VFM(V)
0.01
50
75
100
125
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
4/7
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