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ESDA6V1S6 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
ESDA6V1S6
ST-Microelectronics
STMicroelectronics ST-Microelectronics
ESDA6V1S6 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
APPLICATION EXAMPLE :
1 - Protection of logic-level signals.
(ex : centronics junction)
D1
0 to 5 V
0 to 5 V
D2
ESDA6V1S3 / ESDA6V2S6
2 - Protection of symmetrical signals.
Note : Capacitancevalue between any I/O pin and
Ground is divided by 2.
A1
+/- 2.5 V
+/- 2. 5 V
A2
Dn
0 to 5 V
A16
+/- 2.5 V
Implementing its ASDTM technology,SGS-Thomson
has developed a monolithic TRANSIL diode array,
which is a reliable protection against electrostatic
overloads for computer I/O ports, modems, GSM
handsetsand accessories or other similar systems
with data outputs. The ESDAxxSx integrates 18
TRANSIL diodes in a compact package that canbe
easily mounted close to the circuitry to be
protected, eliminating the assembly costs
associated with the use of discrete diodes, and
also increasing system reliability.
Each TRANSIL has a breakdown voltage between
6.2V (minimum) and 7.2V (maximum). When the
input voltage is lower than the breakdown voltage,
the diodes present a high impedance to ground.
For short overvoltage pulses, the fast-acting
diodes provide an almost instantaneousresponse,
clamping the voltage to a safe level.
5/7

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